3, vul. Pivnichno-Syretska, Kiev, Ukraine 04136

Phone: /044/ 434-72-77

Fax: /044/ 442-01-93

e-mail: detector@carrier.kiev.ua

http://www.imd.com.ua

Development and production of flexible switching elements and assembly of products on their base

The department carries out:

• development of constructions and assembly of microcircuits of modifications 2. Constructively these integrated circuits are crystals with aluminium leads on polyimide base. The process of assembly includes pro-

• duction of flexible carriers, attaching of them to standard crystals with the use of ultrasonic bonding, sealing by polymeric materials with carrying out of technological quality tests induling electro-termotesting. The methods of integrated circuit wiring are ultrasonic bonding and/or fluxless soldering;

• waking of multilead input microcables of type aluminium-polyimide for assembly of high energy detectors.
  Microcables may have up to few hundreds of leads up to 36 microns wide, where accuracy of making of foil 14 microns wide is ±4 microns, leads pitch - up to 80 microns;

• The original technology of production of printed cables of aluminium-polyimide dielectric for the use in gyroscopes have been developed. Cables withstand up to 100 000 double bends with radius of 5 mm in effective range of temperatures from - 190 to + 250оС. Lead pitch up to 100 microns, methods of assembling – ultrasonic bonding to rigid plates with Al, Cu, Ni, Ag, Au coats or fluxless soldering;

• The technology of production of low-resistance acoustic membranes on polyimide base have been also developed. Thickness of alumimium layer is 14, 20 or 25 microns, where accuracy of spiral resistance reproduc-

• tion is 7-10% depending on membrane type.

Physical and technological investigations of materials, structures and devices in micro- and optoelectronics "Microanalytics" Center

provides complex precision investigations of important parameters of materials, structures and semiconductor devices at different stages of their manufacturing.
Investigations are carried out in order to optimize and certificate the technological processes and produce high performance and high reliability products.
Special attention is concentrated on revealing and localization of the electrically active defects which essentially deteriorate the performance and reliability of the devices. Degradation mechanisms of device parameters are examined during their operation. The following methods are employed:

- precision electrical an electrophysical measurements;

- optical and scanning electron microscopy;

- x-ray microanalysis;

- ellipsometry;

- secondary ion mass spectroscopy;

- spectrophotometry;

- deep level transient spectrocopy (DLTS);

- microprofiling of the surface;

- liquid crystals for analysis of thermal fields on the surface of semiconductor devices and determination of defect concentration in insulating films and other Effects of radiation are studied. Failure analysis is carried out. The peculiarities of construction and parameters of technological layers in the advanced high-tech devices are investigated (reverse engineering).

DEVELOPMENT OF TECHNOLOGICAL PROCESSES FOR IC PRODUCTION

• development of technology of silicon integrated circuit manufacturing (CMOS, bipolar, n-channel MOS), introducing the developed technologies into practice;

• development of technology of high efficiency solar cells manufacturing, introducing the developed technology into practice;

• development of technology of metallization formation for silicon and other layers by means of vacuum deposition (In, Ni, Ti, Al with thickness in the

• range 50 - 2000 nm);

• development of technology of insulator layers formation (SiO2, Si3N4) by means of deposition from vapour phase low-energy plasma (thickness in the

• range 50 - 1000 nm);

• development of technology and formation of ion-implanted layers with controlled electrophysical parameters and doping density (B,P) in the range 1015-1019 cm-2 at the depth up to 5.10-7 m;

• development of technology and providing plasma etch of Si -poly, Si3N4, SiO2 layers. Depth of etching: 50 - 1000 nm Precision protomasks are produced on a reticle 10:1, 5:1, 1:1 on glass substrate is size of 102x102mm2; 127x127mm2; 153x153mm2; with chrome coating or iron oxide throgh exposition of resist by lazer or electronic rays,UV radiation.

Parameters of photomasks

Recipience of the photomasks parameters is provided by:

1. Lazer generators of images.

2. Electronic -rays generators of image "ZBA-21S′" (f. Carl Zeiss Jena Germany)

3. Optical overlaping of topology of 2 masks-installation of overlaping (f. "Leitz")

4. Measuring of error of position elements - installation MVG 5x5" and MVG 7x7" (f. "Leitz")

5. Measuring of submicronic sizes (up to 0,2-0,5 мкм) by digital microscope "Nikon" (Japan).

6. Copies of masks from etalons or flexible masks.

7. Local covering of metal by lazer rays.

8. Removal of coating surface remains - by lazer rays

   
   

The department of integrated microcircuitry, micro- and electronic devices develops CMOS IC on the basis of bulk monocrystal silicon, epitaxial silicon, and also on epitaxial SOS-structures and SOI-structures created by method of laser zone melting of polysilicon on dielectric

The basic directions of work are:

- designing of radiation-hardened CMOS IC with thickness of gate dielectric up to 500Aо and resistance to γ-radiation up to 1 - 106 rad (104 Gr);

- designing of CMOS IC on SOS and SOI structures working in a range of temperatures 20 - 200о С;

- designing of CMOS IC of analog keys and switch boards for switching different polar voltages in a range(-25 ÷+25)V and unipolar positive voltage up to 35 In;

- Research and definition of diagnostic parameters of quality of discrete semiconductor devices and integrated circuits. For Peoples Republic of China are developed and transferred circuits, technology of designing and manufacturing of radiation-hardened microprocessors KM1834 BM86 with two-level metallization.

With acceptance by the representative of the customer the 32-nd channel switchboards on SOS structures are developed and introduced in serial production. Bus shapers of signals 1834ВА86 with a voltage of power source 5 V and their analogues, working in a range of temperatures 20-200о С, are developed and made.

Non-Volatile Memory Products КС1626РФ2 - 256 K CMOS EPROM

* LSI IC is 262,144 bit, ultraviolet erasable, electrically programmable read-only memory.

* CMOS process technology, memory cell structure with floating gate

* organization - 32,768 words by 8 bits per word.

* 100 cycles erase / write minimum

КМ1611РР2 - 256 K MNOS E2PROM

* LSI IC is 262,144 bit, electrically erasable, electrically programmable read-only memory.

* MNOS process technology

* organization - 32,768 words by 8 bits per word.

* 1000 cycles erase / write minimum

КМ1609РР3 - 64 K NMOS E2PROM

* LSI IC is 65,536 bit, electrically erasable, electrically programmable read-only memory.

* NMOS FLOTOX process technology, memory cell structure with floating gate tunnel oxide

* organization - 8,192 words by 8 bits per word.

* 10,000 cycles erase / write minimum

1626РР1F - 1 M CMOS E2PROM

* LSI IC is 1,064,576 bit, electrically erasable, electrically programmable read-only memory.

* CMOS process technology with FLASH memory cell structure

* organization - 131,072 words by 8 bits per word.

• 1000 cycles erase / write minimum.

CENTRE OF OPTOELEC TRONIC TECHNOLOGIES

carries out fundamental and applied research, design-engineering development, production and realization of optoelectronics A3B5/Si devices. There have been developed fiber-optic transceivers of high and super high rate of datas transfer, quantum processors, new structures of LED (including white LED ), LD, PhD and their integral matrixes on base of multi- compound semiconductor, discovered by COT director V.Osinsky.

Production:

· Integral matrix of LEDs and traffic lights on their base (certificate ISO 9001-2001).

· White light solid state sources, controlled with microprocessor, equivalent efficiency more than 200lm/W.

· Selective solar-blind UV photoreceivers, λ= 200-360nm and UV radiometer on their base.

· Fiber-optic transceivers 32, 128, 640,1250Mbit/s, λ = 0,82; 1,3; 1,55µm.

· Portable tester for fiber-optic network parameter measurement

· III-nitride high brightness LED and PhD base technology on Al2O3 substrates

Design and producing infrared multi elements focal plane array (FPA).

1. Technology:

a) cryogenic silicon CMOS, CCD(charge coupled devices) technology for readout devices;

b) MCT(mercury-cadmium-telluride) photodiode technology;

c) Assembly technology of cryostat.

2. Type of FPA devices:

a) line devices format 2x32, 2x64; 2x256;

b) line devices with TDI(time delay integration) function format 4x288; 6x480; 6x576*;

c) matrix format 128x128

3. Basic parameters:

a) wave-length 3-5 µm 8-12 µm;

b) pixel pitch: 50µm x50µm,

30µm x30µm, 56µmx43µm;

c) charge integration capacity: ≥2.0pС(1x107electrons);

d) dynamic output range: ≥2.8V (77dB);

e) noise of the readout circuit: ≤400µV;

f) nonlinearity: ≤2%;

g) output rate of video signal: 5MHz max;

h) power dissipation: ≤100mW;

i) noise equivalent temperature(NETD): 25-80 mK

j) sensitivity: 2.5 - 4.0 A/W

k) detectivity: D*≥2x1010 - 2.5x1011 cmxHz1/2/W

Design and producing mixed integration circuit.

1. Design mixed CCD, CMOS, BiCMOS IC according 1.2, 1.0, 0.8, 0.5, 0.3 µm design rules

2. Design and producing CCD, CMOS, BiCMOS IC according 2.5, 2.0, 1.6, 1.2 µm design rules

Example of thermovision image.

Laboratory deals with the developing the semiconductor devices, integrated circuits and electronics toolkits.

Most advanced areas

1. Semiconductor detectors of ionizing radiations, semiconductor photosensitive devices, coordinate-sensitive detectors for high energy physics, reading electronics for sensors.

2. Developing the spectrometric and dosimetric tools in particular for environment monitoring radiation situation monitoring at the dangerous to radioactive contamination objects and manufactures, gamma-, and X-ray

introscopy and tomography tools.

3. Development of integrated circuits for sensor's reading electronics.

• Silicon p-i-n photodetectors for Gamma-detectors on the basis of scintillator-photodetector, energy range - (0,05-10) MeV with different photoactive areas

• Silicon p-i-n photodetectors near IR range for the optical fibre communication lines, manufactured on planar serial IC technology

• Multielements linear and matrix non-switchable photodetectors for introscopy and tomography (Silicon photoline: 16 elements, total length -1 inche, the step of 1,6 mm, a feature dimension 2x1.175 mm2) (Photodiode matrix: The photodiode matrix 64 elements (8x8), a step on axis X - 3,2 mm, a step on axis Y - 3,2 mm, feature dimension 3x3 mm2, the size of a matrix 25,4x25,4 mm2) (Self-scanned multielements photodetectors Integrated microcircuits SFD32 (128) represent the linear photosensitive array, intended for registration of secondary optical radiation in detectors of X-ray radiation in introscopy and tomograph)

• Silicon coordinate-sensitive strip-detectors for registration of the ionizing radiations and particles in high energy physics

• -Silicon detectors of the ionizing radiations and particles (Are used in detecting blocks for alpha-, beta- radiations)

• Detecting blocks

• Dosimetric and spectrometric charge-sensitive preamplifiers

• Dosimetric instrumentation.